Via and trench filling using injection molded soldering

ABSTRACT

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.15/214,935, filed Jul. 20, 2016, which is a continuation of U.S. patentapplication Ser. No. 15/196,558, filed Jun. 29, 2016, the disclosures ofwhich are incorporated by reference herein. This application is alsorelated to U.S. patent application Ser. Nos. 15/214,914 and 15/214,942,each of which was filed Jul. 20, 2016 and is a continuation of U.S.patent application Ser. No. 15/196,558.

BACKGROUND

The present application relates to trenches and vias, and morespecifically, to techniques for filling trenches and/or vias. Trenchesand vias are often used to interconnect components in electronicstructures, such as integrated circuits, semiconductor structures, etc.Trenches and vias may also be used to facilitate bonding differentlayers to one another in electronic and other structures.

SUMMARY

Embodiments of the invention provide techniques for via and trenchfilling using injection molded soldering (IMS).

For example, in one embodiment a method comprises forming one or morevias in a first layer, forming one or more vias in at least a secondlayer different than the first layer, aligning at least a first via inthe first layer with at least a second via in the second layer, andbonding the first layer to the second layer by filling the first via andthe second via with solder material using injection molded soldering.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts a side cross-sectional view of a substrate, according toan embodiment of the invention.

FIG. 2A depicts a side cross-sectional view of the FIG. 1 substratefollowing formation of vias, according to an embodiment of the presentinvention.

FIG. 2B depicts a close-up side cross-sectional view of one of the viasshown in the FIG. 2A substrate, according to an embodiment of thepresent invention.

FIG. 3A depicts a side cross-sectional view of filling the plurality ofvias in the FIG. 2A substrate, according to an embodiment of the presentinvention.

FIG. 3B depicts a close-up side cross-sectional view of one of thefilled vias in the FIG. 3A substrate, according to an embodiment of thepresent invention.

FIG. 4 depicts a close-up side cross sectional view of the FIG. 2B viafollowing formation of a metal layer on the barrier layer, according toan embodiment of the present invention.

FIG. 5 depicts a close-up side cross sectional view of the filled FIG. 4via, according to an embodiment of the present invention.

FIG. 6 depicts a close-up side cross-sectional view of the FIG. 5 viafollowing a thermal annealing process, according to an embodiment of thepresent invention.

FIG. 7 depicts a side cross-sectional view of a substrate with filledvias wherein the filled vias have different thicknesses, according to anembodiment of the present invention.

FIG. 8 depicts a side cross-sectional view of a substrate with viasformed therein, according to an embodiment of the present invention.

FIG. 9 depicts a side cross-sectional view of the FIG. 8 substratefollowing formation of photoresist layers on the top and bottom surfacesof the FIG. 8 substrate, according to an embodiment of the presentinvention.

FIG. 10 depicts a side cross-sectional view of the FIG. 9 substratefollowing patterning of the photoresist layers, according to anembodiment of the present invention.

FIG. 11 depicts a side cross-sectional view of filling vias in the FIG.10 substrate, according to an embodiment of the present invention.

FIG. 12 depicts a side cross-sectional view of the FIG. 11 substratefollowing removal of the remaining photoresist layers, according to anembodiment of the present invention.

FIG. 13 depicts a side cross-sectional view of the FIG. 12 substratewherein different filled vias have different thicknesses, according toan embodiment of the present invention.

FIG. 14 depicts a side cross-sectional view of three heterogeneouslayers having respective vias formed therein, according to an embodimentof the present invention.

FIG. 15 depicts a side cross-sectional view of the three heterogeneouslayers of FIG. 14 bonded together by filling the vias, according to anembodiment of the present invention.

FIG. 16 depicts a side cross-sectional view of heterogeneous layersbonded together by filling vias formed therein with the vias in theheterogeneous layers having different thicknesses, according to anembodiment of the present invention.

FIG. 17 depicts a side cross-sectional view of a bottom substrate havingtrenches formed therein, according to an embodiment of the presentinvention.

FIG. 18A depicts a side cross-sectional view of the FIG. 17 bottomsubstrate following formation of a delivery substance in one of thetrenches, according to an embodiment of the present invention.

FIG. 18B depicts a top view of the FIG. 18A bottom substrate, accordingto an embodiment of the present invention.

FIG. 19 depicts a side cross-sectional view of a top substrate havingvias formed therein, according to an embodiment of the presentinvention.

FIG. 20 depicts a side cross-sectional view of the top substrate of FIG.19 aligned with the bottom substrate of FIG. 18A, according to anembodiment of the present invention.

FIG. 21A depicts a side cross-sectional view of the aligned FIG. 20structure following filling the vias and trenches to seal the topsubstrate of FIG. 19 to the bottom substrate of FIG. 18A, according toan embodiment of the present invention.

FIG. 21B depicts a top view of the FIG. 21A structure, according to anembodiment of the present invention.

FIG. 22 depicts a side cross-sectional view of a top substrate sealed toa bottom substrate, wherein vias in the top substrate and trenches inthe bottom substrate have different thicknesses, according to anembodiment of the present invention.

FIG. 23 depicts a side cross-sectional view of a bottom substrate havingtrenches and a thermal insulator layer formed therein, according to anembodiment of the present invention.

FIG. 24 depicts a side cross-sectional view of the FIG. 23 bottomsubstrate following formation of a delivery substance in one of thetrenches, according to an embodiment of the present invention.

FIG. 25 depicts a side cross-sectional view of a top substrate havingvias and a thermal insulator layer formed therein, according to anembodiment of the present invention.

FIG. 26 depicts a side cross-sectional view of the top substrate of FIG.25 aligned with the bottom substrate of FIG. 25, according to anembodiment of the present invention.

FIG. 27 depicts a side cross-sectional view of the aligned FIG. 26structure following filling the vias and trenches to seal the topsubstrate of FIG. 25 to the bottom substrate of FIG. 24, according to anembodiment of the present invention.

FIG. 28 depicts a side cross-sectional view of a top and bottomsubstrate sealing multiple different cavities, according to anembodiment of the present invention.

DETAILED DESCRIPTION

Illustrative embodiments of the invention may be described herein in thecontext of illustrative methods for filling trenches and/or vias usinginjection molded soldering (IMS), as well as illustrative apparatus,systems and devices having trenches and/or vias filled using IMS.However, it is to be understood that embodiments of the invention arenot limited to the illustrative methods, apparatus, systems and devicesbut instead are more broadly applicable to other suitable methods,apparatus, systems and devices.

Various types of electronic and other devices utilize vias and/ortrenches to form interconnects between different layers in a structure,between different functional features in the same layer, etc. A goal infabrication of such devices is to make the devices smaller. As thedevices themselves get smaller, it is also desired to shrink or reducethe size of any trenches or vias formed therein. As trenches and viasbecome smaller and smaller, it becomes more difficult to fill thetrenches and vias using conventional techniques. For example, it may bedesired to form trenches and/or vias with high aspect ratios. A highaspect ratio, for example, may be 15:1, e.g., 300 microns depth, 20microns diameter and 50 microns pitch. Embodiments are not limited tovias having an aspect ratio of 15:1. More generally, embodiments provideadvantages for filling trenches and/or vias with aspect ratios rangingfrom about 3:1 to 25:1 or greater. It is to be appreciated, however,that embodiments may be used with any sized via or trench regardless ofits aspect ratio.

In addition to making electronic and other devices smaller, someelectronic and other devices are beginning to use different materialswhich present challenges for filling vias and interconnects formedtherein. As one example, the low resistivity of silicon can raiseconcerns relating to power consumption and noise coupling performance invarious applications. In a WiFi system, for example, glass may be usedin place of silicon for an interposer. Various other applications mayutilize glass interposers and/or trenches or vias with a high aspectratio, including but not limited to robotic devices, smart devices ortags, biological sensors, wearable sensors, radio frequency (RF)antennas, Internet of Things (IoT) devices, drug delivery patches,moisture proof or hermetic encapsulation sealing of heterogeneousstructures, biocompatible and environmentally friendly devices, etc.Filling trenches or vias in glass, however, can be difficultparticularly as the sizes of trenches and vias become smaller. A needtherefore exists for techniques for via filled glass structures withlong term reliability.

Some embodiments provide techniques for facilitating trench and/or viafilling using IMS, as will be described below in the context of FIGS.1-27. It is to be appreciated that FIGS. 1-27, for clarity ofillustration, are not necessarily drawn to scale. In addition, it isimportant to note that the various example sizes and ranges given belowwhen describing elements shown in FIGS. 1-27 are presented by way ofexample only. Embodiments are not limited solely to the examples givenunless specifically noted otherwise below.

FIG. 1 shows a side cross-sectional view 100 of a substrate 102. Thesubstrate 102 may be a glass substrate, a silicon substrate, a polymersubstrate, a ceramic substrate, etc. The substrate 102 may also bereferred to as a wafer herein. Polymer substrates include, by way ofexample, polyethylene terephthalate (PET), polyethylene-naphthalate(PEN), polyimide (PI), etc. Glass substrates may be, by way of example,fused quartz, fused silica, sapphire, Indium tin oxide (ITO),BOROFLOAT®, borosilicate, etc.

The substrate 102 can be a wafer with round shape, a panel with squareor rectangular shape, or a continuous flexible film that is windable onrotating drums. Si and glass substrates, for example, may be wafers.Glass and polymer substrates can be panel substrates. Flexiblesubstrates, such as polyimide layers, can be roll-to-roll substrates.

FIG. 2A shows a side cross-sectional view 200 of the substrate 102following formation of vias 103 therein. Although FIG. 2A shows the vias103 of uniform size, embodiments are not so limited as will be discussedin further detail below with respect to FIG. 7. In addition, theparticular number of vias 103 that are formed in substrate 102 may varydepending on the needs of a particular device or application. Vias 103may be blind vias which may be formed using backside grinding, etc.Depending on the material of the substrate 102, the vias 103 may bereferred to as through-silicon vias (TSVs), through-glass vias (TGVs),etc. Vias 103 may be formed using various techniques, including but notlimited to laser drilling, chemical etching, dry etching, mechanicalmachining, etc.

The substrate 102, in some embodiments, may be a 2 inch to 12 inchwafer, a 450 mm wafer, etc. The wafer may have a thickness ranging from30 microns to 800 microns. Certain substrate materials, such as glass,may be a panel, such as a 500 mm×500 mm panel. The vias 103 may have ahigh aspect ratio. As described above, a high aspect ratio may be 15:1.In other embodiments, a high aspect ratio may be even higher, such as25:1 or greater. Diameters of a high aspect ratio via may be, by way ofexample, as small as 5 μm. The vias 103 in some embodiments have athickness ranging from 30 microns to 300 microns. Pitch range for vias103 in some embodiments is 10 microns to 100 microns.

FIG. 2B shows a close-up side cross-sectional view 210 of one of thevias 103 in the view 200. The view 210 shows one of the vias 103 havinga liner 104 formed on the sidewalls thereof. The liner 104 may be one ofor a combination of layers.

In some embodiments, the liner 104 comprises a solder adhesion layer. Asolder adhesion layer may be formed from a metal that helps solderwetting and allows solder fill material to flow easily into the vias103. The solder adhesion layer therefore improves solder filling yieldfor vias 103 having high aspect ratios. In particular, the use of asolder adhesion layer as the liner 104 may be useful in cases where thevia 103 has a high aspect ratio of 5:1 or greater for both a Sisubstrate and a glass substrate, as it is difficult to fill such highaspect ratio through vias or blind vias due to lower solder flow/wettingin the through via or blind via. The solder adhesion layer, however, isnot limited solely to use with vias having aspect ratios 5:1 or greater.

The solder adhesion layer may be formed from copper (Cu), gold (Au),chromium (Cr), tin (Sn), a copper-nickel (CuNi) alloy, achromium-nickel-gold (CrNiAu) alloy, a chromium-nickel-copper-gold(CrNiCuAu) alloy, a titanium-nickel (TiNi) alloy, atitanium-copper-nickel-gold (TiCuNiAu) alloy, etc. The solder adhesionlayer may have a thickness of 0.1 microns to 10 microns in someembodiments. The thickness of the solder adhesion layer may depend onthe type of solder material used. For example, a high Sn percentagesolder would benefit from a thicker adhesion layer.

In other embodiments, the liner 104 may be a barrier layer. Somesubstrate materials, such as silicon, are not attractive for highfrequency RF applications due to the low resistivity of silicon. The lowresistivity of silicon raises concerns about power consumption and noisecoupling performance. These concerns may be at least partially reducedvia the use of a barrier layer as the liner 104.

The barrier layer may be formed from nickel (Ni), titanium (Ti),molybdenum (Mo), titanium nitride (TiN), tantalum (Ta), tantalum nitride(TaN), etc. The barrier layer may have a thickness of 0.1 microns to 2microns.

In some embodiments, the liner 104 may include both a barrier layer anda solder adhesion layer. For example, the liner 104 may include abarrier layer formed on sidewalls of one or more of the vias 103, and asolder adhesion layer formed over the barrier layer. In suchembodiments, the thicknesses of the barrier layer and solder adhesionlayer may be the same as that described above. Generally, the solderadhesion layer is formed thicker than the barrier layer but this is nota strict requirement.

The liner 104 may be formed using a variety of processing techniques,including but not limited to chemical vapor deposition (CVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), electroplating,electroless plating, etc.

The liner 104 provides enhanced reliability of the vertical structure.For example, the liner 104 may include a barrier layer and/or a solderadhesion bonding layer which advantageously prevents corrosion and/orexcessive current flow. The liner 104 may be a TSV, a tantalum oxideliner, a titanium or nickel liner to vent the surface of the vias 103,etc. The liner 104 may be used as a barrier layer, a solder adhesion orbonding layer, etc.

FIG. 3A shows a side cross-sectional view 300 of the substrate 102 asthe vias 103 are filled using IMS. View 300 shows an IMS head 301, whichincludes solder material 302 and a vacuum 303. The IMS head 301 in thisexample sweeps left to right across the substrate, such that the vacuum303 creates a vacuum in the vias 103 prior to depositing the soldermaterial 302 into the vias 103. In other embodiments the IMS head 301may sweep right to left, front to back, back to front, etc. As shown,several of the vias 103 in view 300 are filled with solder material 106.The solder material 106 may be, by way of example, tin (Sn), atin-silver (SnAg) alloy, a tin-copper (SnCu) alloy, a tin-silver-copper(SnAgCu) alloy, indium (In), bismuth (Bi), an indium-tin (InSn) alloy, abismuth-tin (BiSn) alloy, an indium-bismuth-tin (InBiSn) alloy, agold-tin (AuSn) alloy etc.

FIG. 3B shows a close-up side cross-sectional view 310 of one of thefilled vias 103 in the view 300. As shown in FIG. 3B, the soldermaterial 106 fills the via, with the liner 104 facilitating the fill ofthe via by helping solder wetting to allow the solder material 302 fromIMS head 301 to flow more easily into the via. The use of the liner 104thus improves solder filling yield, while also providing benefitsrelating to corrosion effects and excess current flow.

In some embodiments, techniques may be used to form an intermetalliccompound (IMC) in one or more of the vias 103. FIG. 4 shows a close-upcross sectional view 400 of the via shown in FIG. 2B following formationof metal layer 105 on the liner 104. The metal layer 105 may be a copper(Cu) or nickel (Ni) layer, Au coated Cu, Au coated Ni, etc. The metallayer 105 may have a thickness that is based at least in part on thediameter of the via. For example, the total thickness of the metal layer105 and liner 104 may range from approximately ½ to ¾ of the viadiameter in some embodiments. As an example, the metal layer 105 may be5 microns thick when the via diameter is 20 microns. When the metallayer 105 is Au-coated, the Au coating may have a thickness ofapproximately 0.1 to 1 micron.

FIG. 5 shows a close-up side cross-sectional view 500 of the FIG. 4 viaafter it is filled with solder material 106 via IMS. In someembodiments, in the case of 20 microns diameter of via, the liner 104may be 1 micron thick, the metal layer 105 may be 5 microns thick, andthe solder material 106 may be 8 microns thick. It is to be appreciated,however, that these thickness are provided by way of example only andthat embodiments are not limited solely to the use with this specificexample thickness. The structure shown in FIG. 5 may be thermallyannealed to form IMC 108 as shown in the close-up side cross-sectionalview 600 in FIG. 6.

The thermal anneal process may use a time in the range of 30 minutes to1 hour at a temperature over the melting temperature of solder material106. As shown in FIG. 6, after formation of the IMC 108, at least aportion of the liner 104 remains. The amount of liner 104 which remainsafter the thermal anneal will depend on the specific annealing process,as well as the volume ratio between the solder material 106 and theliner 104. In some embodiments, at least a portion of the liner 104 maybe the same material as the metal layer 105. The formation of IMC 108 isthe result of reaction between the solder material 106 and the metallayer 105. For example, the solder material 106 and metal layer 105 mayresult from a reaction of Cu or Ni in the liner 104/metal layer 105 withSn in the solder material 106. The IMC 108 may be Cu₃Sn or Cu₆Sn₅ whenthe liner 104 is Cu, or Ni₃Sn₄ when the liner 104 is Ni. If the liner104/metal layer 105 is thick, the Cu in the liner 104 will not totallyreact with the Sn in the solder material 106 and thus at least a portionof the liner 104 may remain after formation of IMC 108 even when theliner 104 and metal layer 105 are formed at least partially of the samematerial.

IMC 108 can be used to provide a number of benefits, including but notlimited to providing an increased current carrying capacity. Forexample, if the solder material 106 is Sn and the liner 104 is Cu, theIMC 108 will be Cu₆Sn₅ and/or Cu₃Sn. The melting temperature of Sn is232° C., but the melting temperature of Cu₆Sn₅ is 415° C. and themelting temperature of Cu₃Sn is 676° C. The higher melting temperatureof the IMC 108 provides an increased current carrying capacity.

As mentioned above, in some embodiments different ones of the vias 103formed in substrate 102 may be different sizes. FIG. 7 shows a sidecross-sectional view 700 of such a structure. FIG. 7 shows filled viasof three different sizes—solder filled vias 106-1, solder filled via106-2 and solder filled via 106-3. It is to be appreciated that a singlesubstrate may have only two different sized vias, or more than threedifferent sized vias in other embodiments. In the FIG. 7 example, solderfilled via 106-2 is approximately five times the thickness of solderfilled vias 106-1, and solder filled via 106-3 is approximately threetimes the thickness of solder filled vias 106-1. It is to beappreciated, however, that these relative sizes are shown simply forclarity of illustration, and that vias may be different sizes that arenot necessarily three times or five times the multiple of another via.The sizing of liner 104, solder adhesion layers and barrier layers maybe the same regardless of the thickness of the vias used. For example,in some embodiments the liner 104 is the same size for solder-filledvias 106-1, 106-2 and 106-3.

Different size vias may be used for different purposes. For example,some vias may be used for interconnects between electrical components indifferent layers of a multi-layer structure, as will be described infurther detail below with respect to FIGS. 14-16. Other vias may befilled so as to bond different layers in a multi-layer structure, aswill also be described in further detail below with respect to FIGS.14-16. In some embodiments, vias may be filled to seal differentsubstrates together, as will be described in further detail below withrespect to FIGS. 17-27. The purpose of a via (e.g., forming aninterconnect, bonding layers together, forming a seal, etc.) may requiredifferent sized vias. Different interconnects may also require differentthicknesses to provide different current flows between different typesof functional features for a particular application. Various otherexamples are possible.

As mentioned above, some silicon interposers or substrates are notattractive for high frequency RF applications due in part to the lowresistivity of silicon, which raises concerns relating to powerconsumption and noise coupling performance. Glass represents analternative substrate or interposer material, which may be used as abuilding block for mobile integration on interposers. Glass provides anumber of desirable properties, including low substrate losses in theRF/microwave range, mechanical robustness, and low material andmanufacturing cost. Using the above-described techniques for IMS viafilling, it is possible to further reduce the costs associated withusing glass for interposers.

Glass interposers may be used, by way of example, as part of a WiFisystem. WiFi baseband (BB) and RF components, along with an antenna, maybe formed on a glass interposer. Vias or trenches formed in the glassinterposer may be used to form interconnects between WiFi BB and RFcomponents as well as the antenna. As an example, the above-describedtechniques may be used to form a 1 mm ground-signal-ground (GSG)transmission line between the WiFi RF component and an antenna runningat 60 GHz with power loss at 14%, compared with a power loss of 26.7%using a silicon interposer. Thus, the glass interposer represents a 48%improvement over using the silicon interposer. It is to be appreciated,however, that in some cases silicon interposers may be used for WiFisystems and other high frequency RF applications. The use of the barrierlayer in liner 104, for example, can at least partially reduce theconcerns relating to silicon's low resistivity.

In some embodiments, using techniques described above with respect toFIGS. 1-7, a method includes forming one or more vias in a substrate,forming at least one liner on at least one sidewall of at least one ofthe vias, and filling said at least one via with solder material usinginjection molded soldering. The at least one via may have a high aspectratio, such as an aspect ratio of 3:1 or greater, 15:1 or greater, 25:1or greater, etc. Forming one or more vias in the substrate may includeforming at least a first via having a first thickness and forming atleast a second via having a second thickness different than the firstthickness. Forming the at least one liner may include forming at least afirst liner on at least one sidewall of the first via and forming atleast a second liner on at least one sidewall of the second via.

The substrate may be formed of various materials. For example, thesubstrate may comprise a glass substrate, and the liner may comprise asolder adhesion layer. The solder adhesion layer may comprise at leastone of a copper layer, a nickel layer, a chromium layer, a gold layerand a titanium layer. The solder adhesion layer may have a thicknessthat is independent of the size of the at least one via.

As another example, the substrate may comprise a silicon substrate andthe liner may comprise a barrier layer and a solder adhesion layerformed over the barrier layer. The barrier layer may comprise at leastone of a nickel layer, a titanium layer, a titanium nitride layer, atantalum layer and a tantalum nitride layer with the solder adhesionlayer comprising at least one of a copper layer, a nickel layer, achromium layer, a gold layer and a titanium layer. The barrier layer mayhave a first thickness and the solder adhesion layer may have a secondthickness, where the second thickness is greater than the firstthickness.

The liner may be formed by forming a barrier layer, forming a solderadhesion layer on the barrier layer and forming a metal layer on thesolder adhesion layer. In some cases, the solder adhesion layer and themetal layer may be the same. The metal layer may comprise one of copper,gold, and nickel. The total thickness of the liner, including thebarrier, layer, solder adhesion layer and metal layer, may beapproximately ½ to ¾ of the diameter of the at least one via. The filledvia may be thermally annealed so as to form an intermetallic compoundfrom the metal layer and the solder.

An apparatus, formed using the above-described method, may include asubstrate having one or more vias formed therein, wherein at least oneof the vias has at least one liner formed on at least one sidewallthereof, and one or more interconnects formed through said at least onevia, the interconnect comprising solder material filled using injectionmolded soldering. As described above, the substrate may be a glasssubstrate and the liner may be a solder adhesion layer. The substratemay alternatively be a silicon substrate, and the liner may include abarrier layer and a solder adhesion layer formed over the barrier layer.A barrier layer may also be part of the liner used for a glass substratein some embodiments. A first one of the vias in the substrate may have afirst thickness and a second one of the vias in the substrate may have asecond thickness different than the first thickness.

An integrated circuit may also be formed using the above-describedmethod. For example, such an integrated circuit may include a glassinterposer having one or more vias formed therein, wherein at least oneof the vias has a solder adhesion layer formed on at least one sidewallthereof, and at least one interconnect formed through said at least onevia, the interconnect comprising solder material filled using injectionmolded soldering.

In some embodiments, IMS is used to fill vias and provide electricalconnections at the same time. An exemplary process for doing so will bedescribed in detail below with respect to FIGS. 8-13.

FIG. 8 shows a side cross-sectional view 800 of a substrate 802 havingvias 803 formed therein. The vias 803 may be formed using processessimilar to those used in forming vias 103 in substrate 102 as discussedabove. The substrate 802, similar to the substrate 102, may be formed ofvarious materials including but not limited to glass, silicon, ceramic,a polymer, etc.

Substrate 802 may be sized similar to the substrate 102 described above.Vias 803, similar to the vias 103, may vary in size as needed for aparticular application. In some embodiments, the vias 803 aredimensioned similar to the vias 103 described above.

FIG. 9 shows a side cross-sectional view 900 of the substrate 802 withphotoresist layers 804-1 and 804-2 formed on a top and bottom surfacethereof. The photoresist layers 804-1 and 804-2 are next patterned asshown in the cross-sectional view 1000 of FIG. 10. Various techniquesmay be used for patterning the photoresist, including but not limited toultraviolet (UV) exposure, photolithography, etc.

As shown in FIG. 10, the top photoresist layer 804-1 is patterned so asto expose regions 805 while the bottom photoresist layer 804-2 ispatterned so as to expose region 807. It is to be appreciated, however,that the particular patterning of the photoresist layers 804-1 and 804-2may vary depending on the needs of a particular application. By way ofexample, in some embodiments the patterning of the top and bottomphotoresist layers 804-1 and 804-2 may be the same size and shape andaligned with one another—in other words the same portions of the top andbottom surfaces of the substrate 802 may be exposed instead of thediffering exposed portions as shown in FIG. 10.

Although not explicitly shown in FIGS. 8-10, a liner similar to liner104 may be formed on sidewalls of one or more of the vias 803 ofsubstrate 802. Thus, the techniques described above with respect toFIGS. 1-7, including forming liners having solder adhesion layers,barrier layers, metal layers for formation of IMCs, etc. may be used forthe vias 803 in substrate 802.

FIG. 11 shows a side cross-sectional view 1100 of filling the vias 803in substrate 802 using IMS head 1101. As shown, the FIG. 10 structure isplaced on a plate 810 having an oxide layer 808 formed on a top surfacethereof. The plate 810 may be a rigid or flexible layer where moltensolder is not wetting. As an example, the plate 810 may be a Kapton® orother polyimide film, glass, or a Si wafer with a natural Si-oxide onits surface. The oxide layer 808 ensures non-wetting of solder materialfrom IMS head 1101 as it sweeps from left to right across the topsurface of the photoresist layer 804-1. The vias 803 are filled withsolder material 806, as are the exposed portions of the photoresistlayers 804-1 and 804-2. Liners may be used as described above withrespect to FIGS. 1-7 to facilitate the solder fill process.

The remaining portions of the photoresist layers 804-1 and 804-2 maythen be removed, and the resulting structure is shown in the sidecross-sectional view 1200 of FIG. 12. FIG. 12 also shows the resultingstructure removed from the plate 810 and oxide layer 808.

While FIGS. 8-12 show a substrate 802 having vias 803 that are the samesize, embodiments are not limited to this arrangement. FIG. 13 shows aside cross-sectional view 1300 of a substrate 1302 with filled vias andinterconnects 1306-1 and 1306-2. As shown, the via formed in substrate1302 of the filled via and interconnect 1306-1 is approximately twicethe thickness of the via formed in substrate 1302 of the filled via aninterconnect 1306-2. Various other arrangements are possible, includingsubstrates with more than two vias formed therein, as well as substrateswith more than two different sized vias formed therein.

The use of IMS to fill the vias 803 and exposed portions of thephotoresist layer 804-1 and 804-2 provides a number of advantages,including simplifying the fabrication process by forming filled vias andconnections at the same time, rather than via multiple depositions,photolithography, and etchings. Using IMS, the time for filling vias isthe same regardless of the thickness of the via and connections. Incontrast, using electroplating the plating time is dependent on the sizeand thickness of vias and connections. The bigger and thicker the viasand/or connection, the more time is needed for plating processes. Also,in the resulting structure shown in FIG. 12, the filled vias 803 areconnected via the solder material formed in the region 807 andindividual ones of the vias may interconnect to other components via thesolder material formed in regions 805.

In some embodiments, using techniques described above with respect toFIGS. 8-13, a method includes forming one or more vias in a substrate,forming a first photoresist layer on a top surface of the substrate anda second photoresist layer on a bottom surface of the substrate,patterning the first photoresist layer and the second photoresist layerto remove at least a first portion of the first photoresist layer and atleast a second portion of the second photoresist layer, filling the oneor more vias, the first portion and the second portion with soldermaterial using injection molded soldering, and removing remainingportions of the first photoresist layer and the second photoresistlayer. The substrate may be, for example, a glass substrate or a siliconsubstrate. At least one of the vias may have a high aspect ratio, suchas an aspect ratio of 3:1 or greater, 15:1 or greater, 25:1 or greater,etc.

Patterning the first photoresist layer may form at least a first exposedportion of the top surface of the substrate and patterning the secondphotoresist layer may form at least a second exposed portion of thebottom surface of the substrate. The first exposed portion of the topsurface of the substrate and the second exposed portion of the bottomsurface of the substrate may be the same size, the same shape, andaligned with one another in some embodiments. In other embodiments, thefirst exposed portion of the top surface of the substrate and the secondexposed portion of the bottom surface of the substrate are at least oneof different sizes, different shapes and not aligned with one another.

Patterning the first photoresist layer may form at least two distinctexposed portions of the top surface of the substrate. The two distinctexposed portions of the top surface of the substrate may be differentsizes and/or different shapes in some embodiments. In other embodimentstwo or more of such distinct exposed portions are a same size, sameshape, or both the same size and the same shape.

Forming the one or more vias in the substrate may comprise forming afirst via having a first thickness and forming a second via having asecond thickness different than the first thickness. Filling the one ormore vias may comprise placing the second photoresist layer over anoxide layer formed on an additional substrate, filling the one or morevias, the first portion and the second portion with the solder materialusing injection molded soldering, and removing the oxide layer and theadditional substrate.

At least one liner may be formed on at least one sidewall of at leastone of the vias, such as using techniques described above with respectto FIGS. 1-7. For example, the substrate may comprise a glass substrateand the at least one liner may comprise a solder adhesion layer. Thesubstrate may also be a silicon substrate, and the at least one linermay comprise a barrier layer and a solder adhesion layer formed over thebarrier layer. Forming the at least one liner may include forming asolder adhesion layer and forming a metal layer on the solder adhesionlayer. The filled via may be thermally annealed so as to form anintermetallic compound from the metal layer and the solder materialdeposited using injection molded soldering.

An apparatus may be formed using the methods described above, with theapparatus comprising a substrate having one or more vias formed thereinand one or more interconnects formed through respective ones of the oneor more vias, wherein at least one of the interconnects extends from atop surface of the substrate through at least one of the vias to abottom surface of the substrate. The at least one interconnect maycomprise a first portion formed on the top surface of the substratesurrounding the at least one via, a second portion formed on the bottomsurface of the substrate surrounding the at least one via, and a thirdportion connecting the first portion and the second portion. The firstportion, the second portion and the third portion comprise soldermaterial filled using injection molded soldering. The substrate may be aglass substrate, and at least one liner may be formed on a sidewall ofthe at least one via.

An integrated circuit may also be formed using the above-describedmethod. For example, such an integrated circuit may include a glassinterposer having one or more vias formed therein and one or moreinterconnects formed through respective ones of the one or more vias. Atleast one of the interconnects extends from a top surface of the glassinterposer through at least one of the vias to a bottom surface of theglass interposer. The at least one interconnect comprises a firstportion formed on the top surface of the glass interposer surroundingsaid at least one via, a second portion formed on the bottom surface ofthe glass interposer surrounding said at least one via, and a thirdportion connecting the first portion and the second portion, wherein thefirst portion, the second portion and the third portion comprise soldermaterial filled using injection molded soldering.

In some embodiments, IMS may be used to bond and connect differentlayers via vias formed in the different layers. FIGS. 14-16 show anexample process for using IMS to bond and connect heterogeneous layers.

FIG. 14 shows a side cross-sectional view 1400 of three heterogeneouslayers 1410, 1420 and 1430. Layer 1410 includes a molding compound 1412and an antenna 1414 formed over the molding compound. The moldingcompound 1412 may be, by way of example, an epoxy mixed with SiO₂particles while the antenna may be a copper thin film. The moldingcompound 1412 may be 450 microns thick, or more generally in the rangeof 50-800 microns in some embodiments. The antenna 1414 may be 1-10microns thick in some embodiments. Layer 1410 also includes a silicondevice 1416 embedded in the molding compound 1410. The silicon device1416 may be, by way of example, a microprocessor, memory, etc. Thesilicon device 1416 may range in size from 1 mm width and 20 micronsheight to 10 mm width and 300 microns height in some embodiments. Asshown, vias 1411 are formed through the layer 1410. The vias 1411 may besimilar in size to the vias 103 described above.

Layer 1420 includes an interposer 1422, which may be formed of glass,silicon, a polymer, etc. The interposer 1422 may have a thicknessranging from 20-100 microns in some embodiments. Embedded passives1424-1, 1424-2 and 1424-3 are formed in the interposer 1422. Theembedded passives 1424-1, 1424-2 and 1424-3 may be respectivecapacitors, resistors, inductors, etc. As shown vias 1421 are formedthrough the layer 1420. The vias 1421 may be similar in size to vias 103described above. In this embodiment, the embedded elements 1424-1,1424-2 and 1424-3 are passive while the silicon device 1416 is active.Other arrangements of active and passive devices are possible in otherembodiments. The embedded elements 1424-1, 1424-2 and 1424-3 may vary insize, from 1 mm width and 20 microns height to 10 mm width and 300microns height in some embodiments.

Layer 1430 includes an organic substrate 1432. The organic substrate1432 may be, by way of example, a bismaleimide triazine (BT) laminatewith copper metal layers in some embodiments. Other suitable materialsmay also be used. The organic substrate 1432 may have a thickness in therange of 50-300 microns in some embodiments. As shown vias 1431 areformed through the layer 1430. The vias 1431 may be similar in size tovias 103 described above. The organic substrate 1432 includes anembedded component 1434. The embedded component 1434 may be a biologicalsensor, a battery, a gas sensor, etc. The embedded component 1434 mayvary in size from 0.1 mm width and 1 microns height to 5 mm width and100 microns height in some embodiments.

Although FIG. 14 shows an example wherein the sizes of the layers 1410,1420 and 1430 are substantially the same, embodiments are not solimited. For example, the height of the layer 1410 may be greater orsmaller than the height of layer 1420, which may be greater or smallerthan the height of layer 1430 in other embodiments. In addition,although FIG. 14 shows an arrangement wherein the vias 1411 in layer1410, the vias 1421 in layer 1420 and the vias 1431 in layer 1430 arethe same thickness, embodiments are not so limited. In otherembodiments, different ones of the layers 1410, 1420 and 1430 may havevias of different thicknesses relative to one another. One or more ofthe layers 1410, 1420 and 1430 may also include vias of differentthickness internal to that layer. For example, the layer 1420 mayinclude one via of a first thickness and a second via of a secondthickness different than the first thickness.

In some embodiments, the different layers 1410, 1420 and 1430 may bepurchased with the vias 1411, 1421 and 1431 pre-drilled or formedtherein. In other embodiments the vias 1411, 1421 and 1431 may be formedafter purchasing or otherwise obtaining the different layers.

The diameter or width of the overall multilayer structure shown in FIG.14 may be approximately 300 mm in wafer, panel or roll form.

FIG. 15 shows a side cross-sectional view 1500 of the layers 1410, 1420and 1430 bonded together via solder material 1406 deposited in the vias1411, 1421 and 1431 via IMS head 1501 as the IMS head 1501 sweeps acrossthe top surface of layer 1410. Although not explicitly shown in FIG. 14,liners such as liner 104 described above with respect to FIGS. 1-7 maybe formed on the sidewalls of one or more of the vias 1411, 1421 and1431. The techniques described above with respect to FIGS. 4-6 may alsobe used to form IMCs in the vias 1411, 1421 and 1431. The soldermaterial 1406 can provide multiple functions and advantages. Forexample, the solder material 1406 filled via IMS can bond the layers1410, 1420 and 1430 together. The solder material 1406 in filled vias1411, 1421 and 1431 can also form interconnects in the resultingstructure. By way of example, the solder material 1406 in filled vias1411, 1421 and 1431 may provide interconnects between functionalfeatures in the layers 1410, 1420 and 1430, such as interconnecting theantenna 1424 to the embedded passive 1424-1 and the biological sensor1434.

As shown in the side cross-sectional view 1600 of FIG. 16, the vias1411, 1421 and 1431 in layers 1410, 1420 and 1430 need not be the samesize. FIG. 16 shows an example wherein the middle layer (e.g., 1420) hasthicker vias than the top layer (e.g., 1410) and the bottom layer (e.g.,1430). In some cases, the difference in via thickness may be a result ofdifferent manufacturing processes in the heterogeneous layers. In otherembodiments, the difference in via thickness may be designed for aparticular application, such as providing increased current carryingcapacity through one or more layers in a heterogeneous structure.

The use of IMS-filled vias to bond layers provides a number of benefitsand advantages. For example, the use of IMS-filled vias facilitatesheterogeneous integration, useful in forming various types of devicesincluding but not limited to biosensors, gas sensors, batteries, IoTdevices, robotic devices, smart devices or tags, etc. The resultingbonding between layers may also be stronger using IMS than using othertechniques. For example, solder material may have more ductility thanelectroplated Cu, thus providing better drop reliability.

In some embodiments, using techniques described above with respect toFIGS. 14-16, a method includes forming one or more vias in a firstlayer, forming one or more vias in at least a second layer differentthan the first layer, aligning at least a first via in the first layerwith at least a second via in the second layer, and bonding the firstlayer to the second layer by filling the first via and the second viawith solder material using injection molded soldering. The first layermay comprise a first substrate of a first material and the second layermay comprise a second substrate of a second material different than thefirst material. The first material may comprise a molding compound andthe second material may comprise one of silicon and glass.Alternatively, the first material may comprise an organic substrate andthe second material may comprise one of silicon and glass. In somecases, the first via and the second via have a same thickness, while inother embodiments their thicknesses may differ from one another.

The filled first and second via form an interconnect between at least afirst functional feature in the first layer and at least a secondfunctional feature in the second layer. The first functional feature maycomprise an antenna and the second functional feature may comprise anembedded passive component. The embedded passive component may be acapacitor, resistor, inductor, etc. The first functional feature mayalternatively be an antenna while the second functional feature is abiological sensor, a battery, etc.

In some embodiments, one or more vias may be formed in a third layerdifferent than the first layer and the second layer. In such cases,aligning the first via in the first layer with the second via in thesecond layer further also includes aligning at least a third via in thethird layer with the first via in the first layer and the second via inthe second layer. Bonding the first layer to the second layer furtherincludes bonding the first layer to the second layer and bonding thesecond layer to the third layer by filling the first via, the second viaand the third via with solder material using injection molded soldering.The first layer may comprise a first substrate of a first material, thesecond layer may comprise a second substrate of a second materialdifferent than the first material, and the third layer may comprise athird substrate of a third material different than the first materialand the second material. For example, the first material may be amolding compound, the second material may be one of silicon and glass,and the third material may be an organic substrate. In other cases, atleast two of the first, second and third layers may be formed of thesame material type. The filled first, second and third vias may form aninterconnect between functional features in different ones of thelayers, e.g., a first functional feature in the first layer and a secondfunctional feature in the second layer, a first functional feature inthe first layer and a second functional feature in the third layer, afirst functional feature in the second layer and a second functionalfeature in the third layer, etc.

One or more vias in the first layer, second layer, and/or third layermay have a liner formed on at least one sidewall thereof usingtechniques described above with respect to FIGS. 1-7. For example, theliner may be a barrier layer and/or a solder adhesion layer.

An apparatus formed using the above-described method may have a firstlayer having one or more vias formed therein and at least a second layerhaving one or more vias formed therein. At least a first via in thefirst layer is aligned with at least a second via in the second layerand the first layer and the second layer are bonded together via soldermaterial filling the first via and the second via, the solder materialbeing filled using injection molded soldering. The first layer maycomprise a first substrate of a first material and the second layer maycomprise a second substrate of a second material different than thefirst material, with one of the first material and the second materialbeing glass.

An integrated circuit may also be formed using the above-describedmethod. For example, such an integrated circuit may include a firstlayer having one or more vias formed therein and at least a second layerhaving one or more vias formed therein. At least a first via in thefirst layer is aligned with at least a second via in the second layerand the first layer and the second layer are bonded together via soldermaterial filling the first via and the second via, the solder materialbeing filled using injection molded soldering. One of the first layerand the second layer may comprise a glass interposer.

In some embodiments, IMS is used to fill trenches and/or vias in two ormore substrates so as to seal the two or more substrates together. FIGS.17-27 illustrate processes for forming seals between substrates usingIMS-filled trenches and vias.

FIG. 17 shows a side cross-sectional view 1700 of a bottom substrate1702. The bottom substrate 1702 may be silicon, glass, ceramic, apolymer material, etc. As shown, the bottom substrate has trenches 1701and a reservoir 1703 formed therein. The trenches 1701 may be similar insize to the vias 103 described above. The size of the bottom substrate1702 may range from 1 mm width and 20 microns height to 10 mm width and300 microns height in some embodiments. The reservoir 1703 may vary insize from 0.5 mm width and 10 microns height to 5 mm width and 150microns height in some embodiments. The trenches 1701 may be etchedusing laser drilling, dry etching, chemical etching, etc. The trenches1701 are an example of a blind via.

The reservoir 1703 is formed to accept a delivery substance. Whilevarious embodiments are described below with respect to the deliverysubstance being a medical substance or drug, embodiments are not limitedto the delivery substance being a medical substance. In otherembodiments, the delivery substance may be a biosensor, gas sensor,battery, smart tag or other electronic device, etc. Depending on thetype of delivery substance used, the top substrate 1902 and the bottomsubstrate 1702 may be pre-sterilized. The sterilization process may beachieved through the use of thermal insulator layers, as will bedescribed in further detail below. Sterilization may be useful in caseswhen the delivery substance 1704 is sensitive at high temperaturebonding.

FIG. 18A shows a side cross-sectional view 1800 of the substrate 1702after the delivery substance 1704 has been deposited in the reservoir1703. As mentioned above, it will be assumed for purposes ofillustration that the delivery substance 1704 is a medical substance ordrug. As shown in FIG. 18A, the delivery substance 1704 does notcompletely fill the reservoir 1703. In other embodiments, however, thedelivery substance 1704 may completely fill the reservoir 1703. In somecases, the delivery substance 1704 may protrude above the top surface ofthe substrate 1704.

FIG. 18B shows a top view 1850 of the FIG. 18A bottom substrate. Asshown the trench 1701 surrounds the reservoir 1703 containing thedelivery substance 1704. Although the trench 1701 is shown in the view1850 as being circular, this is not a requirement. In other embodiments,the trench 1701 may be rectangular or some other shape which surroundsthe reservoir 1703.

FIG. 19 shows a side cross-sectional view 1900 of a top substrate 1902having vias 1901 formed therein. The top substrate 1902 may be Si,glass, polymer, polyimide, etc. The vias 1901 may be formed using laserdrilling, chemical etching, dry etching, etc. The vias 1901 may besimilar in size to the vias 103 described above. The top substrate 1902may range in size from 1 mm width and 10 microns height to 10 mm widthand 300 microns height in some embodiments. The structure shown in view1900 may be viewed as a cap that seals the delivery substance 1704 inthe reservoir 1703 when the vias 1901 of the top substrate 1902 and thetrenches 1701 of the bottom substrate are filled with solder materialvia IMS. As mentioned above, in some cases the delivery substance 1704may protrude above a top surface of the reservoir 1703 formed in bottomsubstrate 1702. In such cases a matching recess or reservoir may beformed in the bottom surface of the top substrate 1902 to accommodatethe portion of the delivery substance 1704 that protrudes above the topsurface of the bottom substrate 1702.

FIG. 20 shows a side cross-sectional view 2000 of the top substrate 1902aligned with the bottom substrate 1702. More particularly, the view 2000shows that the vias 1901 of the top substrate 1902 are aligned with thetrenches 1701 of the bottom substrate 1702. Although FIG. 20 and otherones of the figures show that the vias 1901 and trenches 1701 havematching or similar thicknesses, embodiments are not limited to thisarrangement as will be discussed in further detail below with respect toFIG. 22.

FIG. 21A shows a side cross-sectional view 2100 of the FIG. 20 structurefollowing fillings of the vias 1901 and trenches 1701 with soldermaterial 2106 via IMS. The solder material 2106 seals the top substrate1902 to the bottom substrate 1702, forming a cavity in the space wherethe reservoir 1703 aligns with the bottom surface of the top substrate1902. Thus, the delivery substance 1704 is sealed therein. FIG. 21Bshows a top view 2150 of the FIG. 21A structure.

FIG. 22 shows a side cross-sectional view 2200 of the top substrate 1902sealed to the bottom substrate 1702 via solder fill material 2206. Moreparticularly, FIG. 22 illustrates an embodiment wherein the trenchesformed in the bottom substrate 1702 are larger than the vias formed inthe top substrate 1902. In other cases, however, the vias in the topsubstrate 1902 may be larger than the trenches formed in the bottomsubstrate 1702. In still other cases, one or both of the top substrate1902 and the bottom substrate 1702 may have vias or trenches formedtherein of different sizes.

Although not explicitly shown in FIGS. 17-22, a liner similar to liner104 may be formed on sidewalls of one or more of the vias 1901 of topsubstrate 1902 and/or on sidewalls of one or more of the trenches 1701of the bottom substrate 1702. Thus, the techniques described above withrespect to FIGS. 1-7, including forming liners having solder adhesionlayers, barrier layers, metal layers for formation of IMCs, etc. may beused for the vias 1901 in the top substrate 1902 and/or for the trenches1701 of the bottom substrate 1702.

In addition to providing a seal between the top substrate 1902 and thebottom substrate 1702, the solder fill material 2106/2206 may be used todispense the delivery material 1704 that is sealed in the cavity betweenthe top substrate 1902 and the bottom substrate 1702. For example, thetop substrate 1902 may be “blown” off to dispense the delivery substance1704 by passing current through the solder fill material 2106/2206. Thesolder fill material 2106/2206 in such embodiments should have arelatively low melting temperature. For example, an InBiSn solder, witha 60° C. melting point, is a suitable solder material for suchembodiments although other solder materials with low meltingtemperatures may be used. In such cases, the top substrate 1902 may bevery thin, to facilitate delivery of the delivery substance 1704. As anexample, the top substrate 1902 may be 5-50 microns thick. The thicknessof the bottom substrate 1702 may vary as need so as to form a largeenough reservoir 1703 to contain the delivery substance 1704.

In some embodiments, an additional layer is formed between the cavityand the remainder of the FIG. 21 or FIG. 22 structure. The additionallayer may be used to protect the delivery substance placed in thereservoir from further processing steps. For example, the heat requiredto fill the trenches 1701 and vias 1901 with the solder fill material2106/2206 may, in some cases, damage the delivery substance 1704. Inother cases, the current applied to the solder fill material 2106/2206to release the delivery substance 1704 or otherwise break the sealbetween the top substrate 1902 and bottom substrate 1702 may damage thedelivery substance 1704. For example, the delivery substance 1704 may bea medical substance or drug that must be kept within a certaintemperature range. The delivery substance 1704 may alternatively be asensitive electrical or other component which must be electricallyand/or thermally shielded.

FIG. 23 shows a side cross-sectional view 2300 of a bottom substrate2302, with trenches 2301 and a reservoir 2303 formed therein, similar insize and composition to the bottom substrate 1702, trenches 1701 andreservoir 1703, respectively. The bottom substrate 2302, however, alsoincludes an additional layer 2308 that surrounds the reservoir 2303. Theadditional layer 2308 may be formed by dispensing paste followed by acuring process.

In some embodiments, the additional layer 2308 is a thermal insulator.The thermal insulator may be formed from rubber, epoxy, a rubber/epoxymixed with SiO₂ particles, etc. The thermal insulator may have athickness of 1-5 microns. The thickness of the thermal insulator mayvary depending on the material or materials used for the bottomsubstrate 2302 and/or top substrate 2502. For example, Si has a higherthermal conductivity relative to glass, and thus a thicker thermalinsulator may be used when the bottom substrate 2302 and/or topsubstrate 2502 is formed of Si.

In other embodiments, the additional layer 2308 is an electromagneticshielding layer. The electromagnetic shielding layer may be, by way ofexample a polymer-carbon composite or other suitable material. Thethickness of the electromagnetic shielding layer may by 1-5 microns.Similar to the thermal insulator layer described above, theelectromagnetic shielding layer may have a thickness which varies basedon electromagnetic properties of the materials used for the bottomsubstrate 2302 and/or top substrate 2502. It is also to be appreciatedthat in some embodiments the additional layer may include both a thermalinsulator layer and an electromagnetic shielding layer.

FIG. 24 shows a side cross-sectional view 2400 of the bottom substrate2302 after delivery substance 2304 is placed in the reservoir 2303. Thedelivery substance 2304, similar to the delivery substance 1704, may bea medical substance or drug, a biosensor, a smart tag, an IoT device,some other type of electrical device, etc.

FIG. 25 shows a side cross-sectional view 2500 of a top substrate 2502having vias 2501 formed therein, similar in size and composition to thetop substrate 1902 and vias 1901, respectively. The top substrate 2502also has an additional layer 2508 formed therein. The additional layer2508, similar to the additional layer 2308, may be a thermal insulator,an electrical shielding layer, etc. The materials and sizing of theadditional layer 2508 may match that of the additional layer 2308.

FIG. 26 shows a side cross-sectional view 2600 of the top substrate 2502aligned with the bottom substrate 2302 such that the vias 2501 formed inthe top substrate 2502 line up with the trenches 2301 formed in thebottom substrate 2302. Also, the additional layer 2508 in top substrate2502 lines up with the additional layer 2308 in bottom substrate 2302such that the additional layers 2508 and 2308 surround the cavity formedby the reservoir 2303 forming a continuous additional later 2610.

FIG. 27 shows a side cross-sectional view 2700 of the aligned FIG. 26structure wherein the top substrate 2502 and the bottom substrate 2302are sealed together via solder fill material 2706.

Although not explicitly shown in FIG. 23-27, the trenches 2301 in bottomsubstrate 2302 and the vias 2501 in top substrate 2502 need not be thesame size. For example, the vias 2501 in top substrate 2502 may belarger than the trenches 2301 in bottom substrate 2302, or vice versa.Also, while FIGS. 23-27 show that the trenches 2301 in bottom substrate2302 and the vias 2501 in top substrate are uniform in size, embodimentsare not so limited. One or both of the top substrate 2502 and the bottomsubstrate 2302 may have vias and/or trenches formed therein of differentsizes.

Also, while not explicitly shown in FIGS. 23-27, liners similar to theliner 104 may be formed on sidewalls of one or more of the vias 2501 oftop substrate 2502 and/or on sidewalls of one or more of the trenches2301 of the bottom substrate 2302. Thus, the techniques described abovewith respect to FIGS. 1-7, including forming liners having solderadhesion layers, barrier layers, metal layers for formation of IMCs,etc. may be used for the vias 2301 in the top substrate 2302 and/or forthe trenches 2501 of the bottom substrate 2502.

Similarly, the techniques shown and described with respect to FIGS.17-27 may be used with other embodiments described herein. For example,the techniques for sealing a delivery substance may be used inheterogeneous layer stacking as described with respect to FIGS. 14-16.The use of IMS-filled vias for forming interconnects, as described inconjunction with FIGS. 1-16, may also be used in the context of FIGS.17-27 to provide interconnects between the sealed structures and otherlayers or components of a larger structure, or within other embeddedcomponents of the sealed structures shown in FIG. 21, 22 or 27. By wayof example, embedded passives such as embedded passives 1424-1, 1424-2and 1424-3 may be embedded in the sealed structures of FIGS. 21, 22 and27 so as to provide current or electric charge used to blow the seal fordelivery of the delivery substance. The delivery may be triggered basedon readings from biosensors (e.g., 1434) or silicon or other devise(e.g., 1416) embedded in the structures of FIGS. 21, 22 and 27.

In some embodiments, multiple delivery substances are sealed into thesame structure. For example, some types of medical treatments mayrequire precise timing of medication delivery, such as combinations ofdifferent medical substances in precise times relative to one another,or for time-delayed delivery of a single type of medical substance. Aswill be appreciated, multiple reservoirs may be formed in a bottomsubstrate such as 1702 or 2302 to facilitate such use case scenarios.Multiple different seals may be used through the use of multiple sets oftrenches and vias formed in bottom and top substrates. Different sets ofadditional layers may be used to isolate different reservoirs from oneanother. FIG. 28 shows an example of a structure with two reservoirs,but three or more reservoirs may be used in other embodiments.

As shown in FIG. 28, two delivery substances 2804-1 and 2804-2 are shownin cavities sealed between top substrate 2802 and bottom substrate 2822.Additional layer 2808-1 surrounds the cavity containing deliverysubstance 2804-1, and additional layer 2808-2 surrounds the cavitycontaining delivery substances 2804-2. The top substrate 2802 and bottomsubstrate 2822 are sealed via solder fill material 2806-1 and 2806-2that fills vias formed in the top substrate 2802 and trenches formed inthe bottom substrate 2822. Current may be selectively applied to solderfill materials 2806-1 and 2806-2 to control delivery of deliverysubstances 2804-1 and 2804-2 at different times or in response todifferent trigger conditions. In some embodiments, different solder fillmaterials may be used for 2806-1 and 2806-2, so as to facilitate suchselective control. In other embodiments, the same material may be usedand the delivery substances 2804-1 and 2804-2 may be delivered at thesame or different times. In some cases, a medical substance or drug mayhave component parts that should only be mixed together at a particularpredetermined time before use. Thus, such different portions may beisolated in the different cavities shown in FIG. 28 and then releasedand combined at the same time.

In some embodiments, using techniques described above with respect toFIGS. 17-28, a method includes forming one or more trenches in a firstsubstrate, forming one or more vias in a second substrate, aligning atleast a first trench in the first substrate with at least a first via inthe second substrate and sealing the first substrate to the secondsubstrate by filling the first via and the first trench with soldermaterial using injection molded soldering. The method may furtherinclude depositing a delivery substance in a reservoir formed in thesecond substrate, wherein bonding the first substrate to the secondsubstrate seals the delivery substance between the first substrate andthe second substrate. This seal may be a hermetic seal. The deliverysubstance may be, by way of example, a medical substance, a biologicalsensor, an electronic device, etc.

The first trench may surround the reservoir to facilitate sealing thedelivery substance. In some embodiments, the method also includesforming a first thermal insulator layer between the first trench and thereservoir and forming a second thermal insulator layer in the secondsubstrate. In such cases, aligning the first trench in the firstsubstrate with the first via in the second substrate further includesaligning the first thermal insulator layer and the second thermalinsulator layer, and bonding the first substrate to the second substratefurther includes connecting the first thermal insulator layer and thesecond thermal insulator layer to form a third thermal insulator layersurrounding a cavity comprising the reservoir.

The first substrate may comprise a first material and the secondsubstrate may comprise a second material different than the firstmaterial. For example, the first material comprises one of silicon andglass. The filled first trench and first via may form an interconnectbetween the first substrate and the second substrate. In some cases, thefirst trench and first via are a same size and shape. In otherembodiments, the first trench may have a first thickness and the firstvia may have a second thickness different than the first thickness.

In some embodiments, techniques described above with respect to FIGS.1-7 may be used to form at least one liner on at least one sidewall ofat least one of the first trench and the first via. As an example theliner may comprise a barrier layer, a solder adhesion layer, etc.

An apparatus may be formed using the above-described method, with suchapparatus comprising a first substrate having one or more trenchesformed therein and a second substrate having one or more vias formedtherein. At least a first trench in the first substrate is aligned withat least a first via in the second substrate, and the first substrate issealed to the second substrate via solder material filling the firsttrench and the first via, the solder material being filled usinginjection molded soldering. The apparatus may further include a sealedcavity between the first substrate and the second substrate, wherein thesealed cavity comprise a reservoir formed in the first substrate, thereservoir being surrounded by the first trench. The apparatus may alsoinclude a thermal insulator layer surrounding the sealed cavity, thethermal insulator layer comprising a first portion formed between thefirst trench and the reservoir in the first substrate and a secondportion formed in the second substrate.

The above-described method may also be used to form a substance deliverydevice, with the substance delivery device comprising a first substratehaving one or more trenches, a reservoir and a first thermal insulatorlayer formed therein, at least a first one of the trenches surroundingthe reservoir, the first thermal insulator layer being formed betweenthe first trench and the reservoir, a second substrate having one ormore vias and a second thermal insulator layer formed therein, a sealedcavity between the first substrate and the second substrate, the sealedcavity comprising the reservoir, and a thermal insulator surrounding thesealed cavity, the thermal insulator comprising the first thermalinsulator layer and the second thermal insulator layer. The first trenchin the first substrate is aligned with at least a first via in thesecond substrate, and the first substrate is sealed to the secondsubstrate via solder material filling the first trench and the firstvia, the solder material being filled using injection molded soldering.Various delivery substances, such as a medical substance, may be in thesealed cavity.

Various structures described above may be implemented in integratedcircuits. The resulting integrated circuit chips can be distributed bythe fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. An apparatus comprising: a first layer having one or more vias formed therein, the first layer comprising a molding compound and an antenna disposed over the molding compound; at least a second layer having one or more vias formed therein, the second layer comprising an interposer and at least one passive component embedded in the interposer; wherein at least a first via in the first layer is aligned with at least a second via in the second layer; wherein the first layer and the second layer are bonded together via solder material filling the first via and the second via, the solder material being filled using injection molded soldering; and wherein the filled first and second vias provide an interconnect between the antenna and the at least one passive component.
 2. The apparatus of claim 1, wherein the first via and the second via have a same thickness.
 3. The apparatus of claim 1, wherein the first via has a first thickness and the second via has a second thickness different than the first thickness.
 4. The apparatus of claim 1, wherein the molding compound comprises an epoxy mixed with silicon dioxide (SiO₂) particles.
 5. The apparatus of claim 4, wherein the antenna comprises a copper film.
 6. The apparatus of claim 5, further comprising a silicon device embedded in the molding compound.
 7. The apparatus of claim 6, wherein the silicon device comprises at least one of a microprocessor and a memory.
 8. The apparatus of claim 1, wherein the interposer comprises at least one of glass, silicon and a polymer.
 9. The apparatus of claim 8, wherein the at least one passive component comprises at least one of a capacitor, an inductor and a resistor.
 10. The apparatus of claim 1, further comprising a third layer having one or more vias formed therein, the third layer comprising an organic substrate and at least one embedded component disposed in the organic substrate, and wherein: at least a third via in the third layer is aligned with the first via in the first layer and the second via in the second layer; the first layer, the second layer and the third layer are bonded together via solder material filling the first via, the second via and the third via, the solder material being filled using injection molded soldering; and the filled first, second and third vias form an interconnect between the antenna, the at least one passive component and the embedded component.
 11. The apparatus of claim 10, wherein the organic substrate comprises a bismaleimide triazine (BT) laminate with copper metal layers.
 12. The apparatus of claim 11, wherein the embedded component comprises a biological sensor.
 13. The method of claim 11, wherein the embedded component comprises a battery.
 14. The apparatus of claim 11, wherein the embedded component comprises a gas sensor.
 15. The apparatus of claim 1, further comprising at least one liner disposed on at least one sidewall of at least one of the first via and the second via.
 16. An integrated circuit comprising: a first layer having one or more vias formed therein, the first layer comprising a molding compound and an antenna disposed over the molding compound; at least a second layer having one or more vias formed therein, the second layer comprising an interposer and at least one passive component embedded in the interposer; wherein at least a first via in the first layer is aligned with at least a second via in the second layer; wherein the first layer and the second layer are bonded together via solder material filling the first via and the second via, the solder material being filled using injection molded soldering; wherein the filled first and second vias provide an interconnect between the antenna and the at least one passive component; and wherein the interposer comprises a glass interposer.
 17. The integrated circuit of claim 16, wherein the molding compound comprises an epoxy mixed with silicon dioxide (SiO₂) particles, wherein the antenna comprises a copper film, and further comprising a silicon device embedded in the molding compound, the silicon device comprising at least one of a microprocessor and a memory.
 18. The integrated circuit of claim 16, wherein the at least one passive component comprises at least one of a capacitor, an inductor and a resistor.
 19. The integrated circuit of claim 16, further comprising a third layer having one or more vias formed therein, the third layer comprising an organic substrate and at least one embedded component disposed in the organic substrate, and wherein: at least a third via in the third layer is aligned with the first via in the first layer and the second via in the second layer; the first layer, the second layer and the third layer are bonded together via solder material filling the first via, the second via and the third via, the solder material being filled using injection molded soldering; and the filled first, second and third vias form an interconnect between the antenna, the at least one passive component and the embedded component.
 20. The integrated circuit of claim 19, wherein the organic substrate comprises a bismaleimide triazine (BT) laminate with copper metal layers, and wherein the embedded component comprises at least one of a biological sensor, a battery and a gas sensor. 